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Please contact us for our Main Refurbished Equipment. Appreciate your time.

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Mask Making Equipment: A photomask is typically a transparent fused glass blank covered with a pattern defined by chrome metal. A set of photomasks, each defining a pattern layer in nanoelectronic fabrication, is fed into a photolithography contact aligner or stepper and individually selected for exposure on a silicon wafer. In the case of the contact aligner, there is a one-to-one correspondence between the mask pattern and the wafer pattern. With the stepper, however, the pattern is projected and shrunk by five times onto the wafer surface.

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Heidelberg DWL 2000 Laser Lithography System1. Environment chamber, providing a stable environment for the system
– Laminar airflow (adjustable): 0.3 – 0.5 m/s
– Temperature stability: ± 0.1 °C
– Air quality: Class 10
2. Stage system with linear motors, air bearings and interferometric position control
– Maximum substrate size: 9″ x 9″
– Maximum write area: 200 x 200 mm² (min. 5 mm from substrate edge)
– Substrate thickness: 0 to 7 mm
3. Writing performance
– Write mode: I and II
– Minimum feature size: 0.5um , 0.7um
– Edge roughness(3s): 40nm , 50nm
– CD uniformity(3s): 60nm , 80nm
– Alignment measurement accuracy(3s): 60nm, 70nm
– Overlay accuracy(3s): 160nm, 200nm
– Write speed (mm2/minute): 29, 110

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JEOL JBX-6300FS E-Beam Lithography SystemWriting Mode : High speed or high precision
Beam Current : 30pA to 20nA
Scanning Speed : 12M to 250 Hz
Accelerate Voltage : 20, 50 or 100 kV
Max. Field Size (um2) : High speed mode: 2000 (20kV), 1000 (50kV) or 500 (100kV);
High precision mode: 250 (20kV), 125 (50kV) or 62.5 (100kV)
Mask : 5” x 5” x 0.09”
Wafer : 4” or 2”
Nano-imprint Mask : 65mm x 65mm x 6.35mm
Chip Sample : 2cm x 2cm, 1.5cm x 1.5cm or 1cm x 1cm

Scanning Electron Microscope JEOL JSM-6490Resolution : HV mode 3 nm (30kV), 15 nm (1kV)
LV mode 4 nm (30kV)
Magnification : x8 to x300000 (at 11kV or higher)
x5 to x300000 (at 10kV or lower)
Specimen Stage : X :125mm, Y: 100mm, Z:5-80mm
Tilt : -10 to +90 degree
Image mode : Secondary electron image
Accelerating Voltage : 0.3kV to 30kV
Filament : Factory pre-centered filament
Auto functions : Focus, brightness, contrast, stigmator
Motor control : 5 axes computer controlled
Frame store : 640 x 480, 1280 x 960 pixels
Image format : BMP, TIFF, JPEG

Scanning Electron Microscope HITACHI TM4000PlusMagnification : 10x-100,000x
Specimen Stage : X: 40 mm, Y: 35 mm, Rotation: 0-360 degree
Stage Control : Camera navigation System, 3 axes (X, Y, Rotation) computer controlled
Max. Sample Size : 80 mm (dia.), 50 mm (thickness)
Vacuum Mode : HV, LV
Signal Detector : BSE detector, High-Sensitivity Low- Vacuum SE detector
Image Signal : BSE, SE or Mix (BSE + SE)
Image Adjustment : Auto start, Auto focus, Auto brightness, Camera
Image Data Saving : 2,560 x 1,920, 1,289 x 960, 640 x 480 pixels
Image Format : BMP, TIFF, JPEG

Photolithography Equipment: Photolithography is the complicated process of transferring a pattern from a mask onto the surfaces of silicon wafers or any other substrates. Photolithography is in fact a highly refined version of photoengraving and is performed in a particle-free environment (the “yellow area”). The pattern is first transferred from the mask to a light-sensitive material called a photoresist. It is then transferred from the photoresist to the barrier material on the surface of the wafer by chemical etching or plasma etching.

Nanoscribe 3D PrinterResolution (depends on the objective lens and resist) : – 3D lateral feature size: ≤200 nm
– 2D lateral resolution: ≤500 nm
– Vertical resolution: ≤1,500 nm
Speed : – Beam scanning speed: 10 mm/s
– Piezo scanning speed: 100 µm/s
Range : – Motorized xy scanning stage range:
100 x 100 mm²
-x-y-z piezo range: 300 x 300 x 300 µm³
-x-y galvo scan range 200 – 1000 µm Ø dependent on scanning objective
Maximum structure height : – IP-Q 10x lens DiLL: 8 mm
– IP-S 25x lens DiLL: 3 mm
– IP DiP 63x lens DiLL: 3 mm
– Oil immersion with 170 µm glass: 150 µm
Minimum feature size : -10x lens: ~2 µm x, y and ~10 µm z
-25x lens: 0.6 µm x, y and ~3.3 µm z
-63x lens: 150 nm x, y and 800 nm z
Objectives : 1. Immersion Objective: 63x, NA=1.4; WD=190 um, for high-resolution structures, printing field (Galvo Ø) = 200 um; Typical slicing distance = 0.3 µm; Typical hatching distance=0.2 µm2. Immersion Objective: 25x; NA=0.8; WD=380 um, for mesoscale structures; Printing field (Gavle Ø) = 400 µm; Typical slicing distance =1 µm; Typical hatching distance=0.5 µm3. Air Objective: 20x, NA=0.5; WD=2100 um, for 2D maskless lithography; Printing field (Galvo Ø) = 600 µm; Typical slicing distance=3-6 µm; Typical hatching distance= 0.7-1.2 µm4. Immersion Objective: 10x, NA=0.3; WD=700 um, for rapid prototyping; Printing field (Galvo Ø) =1000 µm; Typical slicing distance= 5 µm; Typical hatching distance =1 µm

ASML StepperLight source illumination : i-line (365 nm)
Resolution : 0.5 µm
Overlay alignment accuracy : ± 0.1 µm (3 sigma)
Wafer size : 4″ or 6″
Field size : 15 mm x 15 mm or
10 mm x 10 mm (on wafer)
Reduction ratio : 5:1
Photomask size : 5″ square

Karl Suss Bonder XB8Adhesive, Anodic, Eutectic bonding and Silicon fusion prebonding
Wafer size : > 2 cm x 2 cm, 4″, 6″ & 8″
Substrate material : Silicon or Pyrex Glass
Pressure : 1x10e-5 mbar to 3 bars
Bonding force : 3500 N ~ 100K N (8″)
Temperature : RT to 500 ºC
Controllable Voltage range : 0 – 2000 V
Controllable Current range : 0-15 mA

SET ACCµRA100 Flip-Chip BonderFlip-chip/Die bonding
Substrate size : 1 mm x 1 mm to 100 mm x 100 mm
Chip size : 1 mm x 1 mm to 50 mm x 50 mm
Post-bonding accuracy : +/- 0.5 µm
Bonding force : 1 N to 1000 N
Temperature : RT to 400 ºC

Karl Suss MA6, 2 sets.Light source illumination : i-line (365 nm)
Resolution : 1 um
Substrate size : > 5 mm2 to 2″ or 4”
Photomask size : 5” square
Exposure modes : Contact (soft, hard, low vacuum and Vacuum)
Proximity (exposure gap 1-300um);
Flood Exposures
Alignment methods : Top Side Alignment (TSA);
Bottom Side Alignment (BSA)
Alignment accuracy : TSA (down to 0.5 µm);
BSA (down to 1 µm)

AB-M Aligner (UV)/(DUV), 2 setsLight source illumination : DUV / UV wavelength selectable
(500W Mercury DUV lamp)
Alighment printing mode : Manual
Soft contact : Contact vacuum adjustable
Hard contact : Full vacuum contact
Photomask : 5″ square or 7″ square
Substrate size : > 5 mm2 to 4″ square, or 6″
Special feature : Backside alignment using Infra-red

SVG88 Coater Track and SVG88 Developer Track, 2 setsAutomatic tracks for resist coating and developing
No. of tracks : 2
Coat track feature : Vapor prime
chill plate: Coat module
Backside rinse: Frontside edge bead remover
2 hot plate ovens
Develop track : Developer module, chill plate, 2 hot plate ovens
Coating uniformity : ± 0.3 %
Wafer size : 4″ and 6″
Wafer loading/unloading : Cassette to cassette

EVG Spray CoaterSpeed range : up to 10000 rpm
Ramp up speed : 0-40000 rpm/s
Heat chuck temperature : up to 70 ± 1 oC
Spray speed integrate with heat chuck : < 1500 rpm
Spray coating nozzle : Ultrasonic Atomizer Nozzle
Syringe dispense rate : 0.01 ml/s to 5 ml/s
Substrate size : Up to 200 mm or 150 mm x 150 mm

SUSS CoaterSpin speed range : 0 to 7000 rpm
Spin speed acceleration : 0-5000 rpm/s
Coat system : Open Bowl; GYRSET
Substrate size : > 5 mm2 to 6″ or 5″ square for single side coating
4″ for double side coating
Other : Programmable bowl auto-clean; Edge bead remover

CEE CoaterSpin speed range : 0- 6000 rpm
Spin speed acceleration : 0-30000 rpm/s
Substrate size : 4″ or 6″
Other : Frontside edge bead remove

Desktop CoaterSpin speed range : 0 to 5000 rpm
Substrate size : > 5 mm2 to 4″ square

Solitec CoaterSpin speed range : 250-5000 rpm
Spin speed acceleration : 1000-4000 rpm/sec
Substrate size : Larger than 5mm, 2 to 4″, 5″ square for single side coating or 4″ for double side coating

High Temperature Conventional Oven, 8 setsHigh temperature oven : Up to 450 oC
Convention oven temperature : Up to 250 oC
Substrate size : Up to 6″

Vacuum OvenTemperature : Up to 300 oC
Substrate size : 1 cm2 to 4″
Vacuum : 0 to 30 in.Hg
Other : N2 purge

Unitemp Reflow Oven ,2 sets (Flip-Chip Bonder too)Reflow Soldering (with Formic Acid Option)
Substrate size : Fragments to 160 mm
Substrate Thickness : Up to 10 mm
Vacuum Range : Atmosphere to 10-3 hPa or mbar
Oven Temperature : Ambient to 350oC
Ramp Up Rate : Up to 120 K/min
Gas Flow Control : Nitrogen at max. 5 normal litre per min

Nikon IC Inspection Microscope with Digital CameraContrast methods : BF /DF/ DIC/ Fluorescence
Magnification : 50X – 1500X
Wafer holder : up to 6″
Mask holder : 5″ square
Digital camera : 5M pixel CCD
Display : 8.4″ TFT LCD XGA
Software : Dimension measurement tool

Hot Plates , 8 setsComputer temperature controller with digital readout
Substrate size : Up to 6″
Temperature : 50 to 250 oC
Temperature uniformity : ± 1 oC

Laurell PDMS Coater (Microfluidic)Spin Speed range : 0- 6000 rpm
Spin speed acceleration : 0-30000 rpm/s
Substrate size : 2″ or 4″

Kurabo PDMS Mixer/Deaerator  (Microfluidic)Max. processing quantity : 310 g x 1 container
Revolution : 200 – 2000 rpm (Mixing mode)
400 -2200 rpm (Deaerate mode)
Rotation : Max 800 rpm (Mixing mode)
Max 66 rpm (Deaerate mode)
Setting time : 0 – 30 mins x 9 steps

Wet Etching and CMP Equipment : Chemical wet etching is the technique of removing any barrier material not protected by the hardened photoresist after the photolithography process using liquid-phase etchants. Etchants must be highly purified and filtered. Which etchant to use depends on the material to be etched. We have several specially designed wet processing stations and a wide variety of pre-mixed etchants to choose from. The Chemical and Mechanical Polishing (CMP) process is a breakthrough technology in the manufacture of today’s advanced semiconductor chips. It is a highly accurate process of flattening and smoothing the surface of a silicon wafer so that multiple layers of intricate chip circuitry can be built on it. The process is essential to maintaining a wafer’s integrity, especially as the new generations of chips continue to shrink in size.

Wetstations, 10 setsSilicon Etch using KOH / TMAH (25%)
Photoresist Strip / ITO Etch
Aluminum Etch / Pad Oxide Etch
Oxide / Nitride Etch
Wafer Cleaning (RCA)
Wafer Cleaning (Piranha Clean)
Solvent Cleaning

Wetstation , 3 setsMS2001 Resist Stripper
FHD5 Manual Developer
Quick Dump Rinsers
Small samples up to 6”

WetstationHydrochloric Acid Etch Prior E-Beam Metallization
DI Water Gun for rinse
N2 Gun for dry
Small samples up to 6″

Wetstation , 8 setsMS2001 resist stripper
FHD5 manual developer
Quick dump rinsers
Small samples up to 6″

USI Wafer CleanerWafer surface scrubbing for pre-CMP and post -CMP process
Fully automatic microprocessor control
Completely enclosed chamber for washing, rinsing and drying
4″ wafer cleaning
9″ brush travel

Silicon GrinderMechanical grind for Silicon Oxide or Silicon using diamond wheel
>5mm2 to 4″ wafer size
100-800um wafer thickness

Buehler PolisherPolished for Silicon, Silicon Oxide or Silicon Nitride
>5mm2 to 4″ wafer size
100-800um wafer thickness

Buehler PolisherPolished for Copper, CNT, Silicon, Silicon Oxide or Silicon Nitride
>5mm2 to 4″ wafer size
100-800um wafer thickness

GnP CMPEquipment model : POLI-400L
Polishing materials : Silicon dioxide or Polysilicon
Sample Size : 1″x1″ or 4″
Wafer Thickness : 400-550 µm
Wafer Carrier : Membrane style with floating ring
Polishing platen and wafer carrier speed range : 30-200 rpm
Oscillating Arm Pad Conditioning

Copper ElectroplatingCopper Electroplating on 2″ single side or 4″ single/double sides wafer size
Ready for Copper Electroplating to fill the small trench 300-550um wafer thickness

Thermal Diffusion and Ion Implantation Equipment : To fabricate nanostructures and nanodevices, various kinds of thin films are used. Thermal oxidation plays an important role in silicon device fabrication. It is a key process in modern semiconductor technology. Dielectric materials, such as silicon dioxide and silicon nitride, are mainly used for insulation and passivation. Low-Pressure Chemical Vapor Deposition (LPCVD) and Plasma-Enhanced Chemical Vapor Deposition (PECVD) are the most commonly used methods for thin film deposition. For high-K material, atomic layer deposition offers precise control of film thickness down to the atomic scale and excellent conformity even in high-aspect-ratio structures. Polysilicon acts as the gate electrode and device interconnection is achieved through silicide formation. The thermal process facilitates oxidation and thin film deposition in wafer processing. Other related processes are thermal annealing which enables us to study the properties of different materials or their structural performance as a function of temperature, thermal diffusion dopant activation, etc. Ion implantation is the process by which impurities such as boron and phosphorous are introduced into a silicon wafer to control the majority-carrier type and resistivity of layers formed on the wafer. It is the primary method used to modify the electrical properties of wafers. Following ion implantation, a thermal diffusion or annealing process is needed to drive-in and activate the implanted dopants.

CF-3000 Implanter ,IMP-3000Dose Energy : 10 to 180 keV
Max. Dose (ion/cm2 ) : 1016
Processing : Arsenic, Phosphorus, Boron, BF2 & Hydrogen implant

LPCVD,7 setsEach deposition has its programmed flow of gases compositions, temperature and pressure
ASM LB45 LPCVD Furnace:
Polysilicon, Amorphous silicon, N-doped Amorphous Silicon, Silicon Germanium, Silicon Nitride,
Low Temperature Oxide (LTO), Phosphorous Silicon Glass (PSG)
Flokal LPCVD Furnace:
Polysilicon, Amorphous silicon, Silicon Nitride,
Low Stress Silicon Nitride, LTO, PSG

Diff. Furnace , 9 setsOperating temperature : 400 to 1150 oC
Processing : Dry & Wet Oxidation with TCE, N/P diffusion, Forming Gas annealing and Drive in

ET3000 EpitaxyEpitaxial layers of Silicon, Silicon Germanium,
N-doped(PH3), P-doped (B2H6)
Fit for up to a 4″ wafer

Surface Tech Sys ( STS , SPTS ) Multiplex STS PECVDProcessing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon

Surface Tech Sys ( STS , SPTS ) Multiplex 310PC PECVDProcessing : Silicon Dioxide, Silicon Nitride
Silicon Oxynitride
Amorphous Silicon

TEOS PECVDTEOS PECVD (CVD-TEOS)

Oxford ALDThermal and plasma ALD
Processing : Aluminum Oxide (Al2O3)
Zirconium Oxide (ZrO2)

CNT PECVDFrequency : 2455 MHz
Processing : CNT growth
Temperature : 900 oc

MPT RTP-600S RTPSteady-state temperature stability : ±2℃ in the range of 250-1150℃
Heating rate : 0-200℃/sec
Cooling rate : 150℃ max/sec
Steady state time : 1-600 sec

AG Associates Heatpulse 610 RTPOperating temperature in the range of 400℃ to 1000℃
Ion implantation annealing
Silicide formation
Nitridation of thin gate, dielectrics & silicide
PSG/BPSG reflow

Allwin21 AW610 RTPWafer handling : Manual loading of wafer into the oven, single wafer processing
Wafer sizes : Small samples and 2″, 4″ and 6″ wafers
Ramp up rate : Programmable, 10℃ to 80℃ per second
Ramp down rate : Programmable, 10℃ to 80℃ per second
Operating temperature in the range of 250℃ to 800℃
Ion implantation annealing
Silicide formation, nitridation of thin gate, dielectrics & silicide, PSG/BPSG reflow

Dry Etching ,Evaporator and Sputtering Equipment : Dry etching is one of the most critical processes in micro and nanofabrication. This process is also known as dielectric etching, polysilicon etching, or conductor etching, depending on the type of film that is removed from the substrate. Two basic steps are involved. In the pattern definition step, a lithography process is used to create the desired pattern on the photoresist. Then in the pattern transfer step, the required pattern is dry etched onto the silicon itself, or onto a deposited layer of insulating or conducting material. The most common form of dry etching is reactive ion etching (RIE), through which a highly anisotropic profile of the etched material can be obtained. In-line process characterization for photolithography, etching, CMP, ion implantation and CVD enables us to monitor the machine performance and a number of key process control functions. We are equipped with many metrology systems providing non-destructive or destructive, real-time measurement of critical parameters. The effectiveness of the whole process can thus be monitored.

Surface Tech Sys ( STS , SPTS ) Multiplex Poly EtcherGases available : HBr, Cl2, O2, N2, He & Ar
RF power source : 1x 1000W(max) at 13.56MHz for Coil electrode,
1x 300W(max) at 13.56MHz for Platen electrode
Electrode coolant system : 20 oC
High speed turbo molecular pump : pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size : 4” single wafer
Polysilicon etch
Minimum line/space : 0.5 µm
Low rate polysilicon etch E/R : ~ 900 Ȧ/min
Selectivity to oxide : 13:1
Selectivity to photoresist : 12.5:1
Uniformity : 5%
Normal rate polysilicon etch
E/R : >1800 Ȧ/min
Selectivity to photoresist : 2.5:1
Uniformity : 5%

Surface Tech Sys ( STS , SPTS ) Multiplex GaN EtcherGases available : BCl3, Cl2, CH4, SF6, O2, He & Ar
RF power source : 1x 1000W(max) at 13.56MHz for Coil electrode,
1x 300W(max) at 13.56MHz for Platen electrode
Electrode coolant system : 5 to 30 oC
High speed turbo molecular pump : pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size : 2″, 4″ or 6” single wafer or specimens
GaN etch
E/R : ~5000 Ȧ/min
Selectivity to oxide : 10:1
Sapphire etch
E/R : ~700 Ȧ/min
Selectivity to oxide : 1.5:1

Surface Tech Sys ( STS , SPTS ) Multiplex DRIE Etcher, Bosch ProcessGases available : C4F8, SF6, O2, N2, He & Ar
RF power source : 1x 1000W(max) at 13.56MHz for Coil electrode,
1x 300W(max) at 13.56MHz for Platen electrode
Electrode coolant system : 5 to 30 oC
High speed turbo molecular pump : pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size : 4″ wafer
Silicon etch
Minimum Line/Space : 0.5 µm
Low Rate Silicon Etch E/R : From 500 Ȧ/cycle
Normal Rate Silicon Etch E/R : Up to 2 µm/min
Selectivity to Photoresist : >50:1
Selectivity to Oxide : >80:1
Uniformity : 7%

Surface Tech Sys ( STS , SPTS ) Multiplex DRIE Etcher Bosch ProcessGases available : C4F8, SF6, O2, N2, He & Ar
RF power source : 1x 3600W(max) at 13.56MHz for Primary Source
1x 3000W(max) at 13.56MHz for Secondary Source
1x 200W(max) at 13.56MHz for Platen electrode
1x 200W(max) at 300-500kHz for Platen electrode
Electrode coolant system : -20 to 40 oC
High speed turbo molecular pump : pumping speed of 2350 L/s at 25000 rpm
Fully automatic loadlock transfer system
Substrate size : 4″ wafer
Silicon etch
Minimum Line/Space : 0.5 µm
Aspect Ratio : Up to 60:1
Low Rate Silicon Etch E/R : From 0.7µm/min (700 Ȧ/Loop)
Normal Rate Silicon Etch E/R : 2 µm/min
Fast Rate Silicon Etch E/R : 18 µm/min
Selectivity to Photoresist : From 12:1 to 250:1
Selectivity to Oxide : From 24:1 to 500:1
Uniformity : <5%

Surface Tech Sys ( STS , SPTS ) Multiplex DRIE EtcherGases available : C4F8, SF6, O2, N2, He & Ar
RF power source : 1 x 1000W(max) at 13.56MHz for Coil electrode,
1 x 300W(max) at 13.56MHz for Platen electrode
Electrode coolant system : 20 oC
High speed turbo molecular pump : pumping speed of 1000 L/s at 36000 rpm
Fully automatic loadlock transfer system
Substrate size : 4″ wafer
Silicon etch
Minimum Line/Space : 1 µm
Low Rate Silicon Etch E/R : 1 µm/min
Normal Rate Silicon Etch E/R : Up to 2 µm/min
Selectivity to Photoresist : >50:1
Selectivity to Oxide : >100:1
Uniformity : 7%

Surface Tech Sys ( STS , SPTS ) Multiplex AOE EtcherGases available : C4F8, CF4, CHF3, O2, N2, H2, He & Ar
RF power source : 1x 3000W(max) at 13.56MHz for Coil electrode,
1x 600W(max) at 13.56MHz for Platen electrode
Electrode coolant system : -5 to 30 oC
High speed turbo molecular pump : pumping speed of 2000 L/s at 48000 rpm
Fully automatic loadlock transfer system
Substrate size : 4″ single silicon or quartz wafer
Silicon Oxide etch
Minimum Line/Space : 0.5 µm
Silicon Oxide Etch E/R : AOE_PRD = 2300 Ȧ/min; AOE_PRB = 3000 Ȧ/min
Selectivity to Photoresist : >4:1
Selectivity to Polysilicon : >15:1
Uniformity : 7.5%

PS210 AsherGases available : O2 & N2
Microwave power source : 2.45 GHz
Substrate size : 4″ wafers

Branson/IPC 3000 plasma AsherGases available : O2 & N2
RF power source : 400W(max) at 13.56MHz
Substrate size : 2″, 4″and 6″ wafers or specimens

Allwin21 AW-B3000 plasma Asher ,3 setsGases available : O2 & N2
RF power source : 400W(max) at 13.56MHz
Substrate size : 2″, 4″ and 6″ wafers or specimens

Oxford RIE EtcherGases available : CHF3, SF6, O2, CF4, Ar, N2, He & H2
RF power source : 500W at 13.56MHz
Huber electrode coolant system : -40 to 200 oC
Substrate size : 4″, up to 3 wafers per run or specimen
Silicon Dioxide Etch
E/R : ~363 Ȧ/min for LTO
E/R : ~352 Ȧ/min for thermal oxide
Selectivity to photoresist : 2.6:1
Selectivity to Silicon Nitride : 0.8:1
Selectivity to Silicon : 6.7:1
Uniformity : 3.6%
Silicon Nitride Etch
E/R : ~810 Ȧ/min
Selectivity to photoresist : 1.5:1
Selectivity to Silicon Dioxide : 2.1:1
Selectivity to Silicon : 5.4:1
Uniformity : 5.8%

AST Metal EtcherChlorine & Fluorine based barrel type system for etching aluminum
Gases available : Cl2, BCl3, CF4, CHF3, He, Ar, O2 & N2
RF power source : 1000W(max) at 13.56MHz
Bias power source : 1000W(max) at 13.56MHz
Substrate size : 4″ wafers
Aluminum Etch
Al etch rate : 1700 Ȧ/min
PR etch rate : 1000 Ȧ/min
SiOx etch rate : 300 Ȧ/min

XeF2 Silicon EtcherGases available : XeF2
Substrate size : 2″, 4″ single wafer or specimens
Silicon Etch Rate
Bright field mask : 600 Ȧ/cycle
Dark field mask : 6000 Ȧ/cycle
Mask used : Oxide

Trion RIE EtcherGases available : CHF3, SF6, O2, CF4, Ar, N2, He and H2
ICP power source : 600W (max) at 13.56MHz
RF power source : 600W (max) at 13.56MHz
Electrode coolant system : 0 to 30 oC
Substrate size : 4″, up to 3 wafers per run or specimens
Silicon Dioxide Etch : ~500 Ȧ/min
Silicon Nitride Etch : ~850 Ȧ/min

Oxford Aluminum EtcherGases available : Cl2, BCl3, HBr, CF4, SF6, O2 and Ar
RF power source : 1 x 3000W (max) at 13.56MHz for coil electrode
: 1 x 300W (max) at 13.56MHz for platen electrode
Electrode coolant system : 5 to 60 oC
High speed turbo molecular pump : pumping speed of 1250 L/s at 37800 rpm
Fully automatic loadlock transfer system
Substrate size : 4″ wafer
Aluminum / Aluminum-Si etch
Minimum line / space : 0.5 µm
High rate Aluminum etch E/R : 3000 Ȧ/min
Normal rate Aluminum etch E/R : 1800 Ȧ/min
Selectivity to Photoresist : > 2:1
Selectivity to Oxide : > 10:1
Uniformity : 5% (etch from edge to center)

RIE EtcherGases available : CF4, CHF3, SF6 and O2
RF power : 120W
Chiller temperature : 20 oC
Fully automatic loadlock transfer system
Substrate size : 4″ wafer
Nitride etch rate : ~500 Ȧ/min
Oxide etch rate : ~460 Ȧ/min
Si etch rate : ~50 to 470 Ȧ/min
Photoresist etch rate : ~151 to 400 Ȧ/min

Oxford GaN-InP EtcherGases available : Cl2, BCl3, CH4, H2, N2, SF6, O2, He and Ar
RF power source : 1 x 3000W (max) at 13.56MHz for coil electrode
: 1 x 600W (max) at 13.56MHz for platen electrode
Electrode coolant system : -10 to 200 oC
High speed turbo molecular pump : pumping speed of 1280 L/s at 39000 rpm
Fully automatic loadlock transfer system
Substrate size : 2″, 4″ or 6″ single full wafer
GaN Etch
E/R: : ~6000 Ȧ/min
Selectivity to Oxide : 9:1
InP Etch
E/R: : ~6000 Ȧ/min
Selectivity to Oxide : 10:1

Critical Point DryerTousmis Automegasamdri®-915B, Series B Critical Point Dryer
• Automatic Supercritical Point Dryer
• All internal surfaces are inert to CO2 and ultra pure alcohols
• 0.08µm internal filtration system delivers clean filtered LCO2 to process chamber
• Small samples up to 6″ wafer
• Up to five wafers per single process

Diener Plasma Cleaner• Gases available: air
• RF power source: 50 W (max) at 13.56 MHz
• Substrate size: 2″, 4″ or specimens

Varian 3180 SputtererGases available : Ar & N2
DC sputtering power source : 3 x 12KW
RF back sputtering power source : 600W at 13.56MHz
Fully automatic wafer handling system
Substrate size : 4″ wafer
Chamber pressure : 5 x 10-7 torr
Target available : Mo, Pure Al, Al-Si & Ti
Sputtering rate ( Ȧ/sec)
~160 Ȧ/sec for pure Al
~180 Ȧ/sec for Al/Si (1%)
~40 Ȧ/sec for Ti
~160 Ȧ/sec for Mo

CVC-601 SputtererGases available : Ar & N2
DC sputtering power source : 1 x 3 KW
RF sputtering power source : 1200W at 13.56MHz
Chamber pressure : 5 x 10-7 torr
Substrate size : 2″, 4″& 6″ wafers or 4″ square glass substrate
Target available : Cu, TiW & Au
Target available on request : Ti, Cr & Al-Si
Sputtering rate (Ȧ/min):
~500 Ȧ/min for Al-Si
~175 Ȧ/min for TiW
~160 Ȧ/min for Au
~1000 Ȧ/min for Cu

ARC-12M SputtererGases available : Ar, O2 & N2
DC sputtering power source : 2 x 250W
RF sputtering power source : 600W at 13.56MHz
Chamber pressure : 1.5 x 10-5 torr
Substrate size : 2″, 4″ wafer or square glass, or specimens
Target available : Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, Ti, TiW, Ni

CY1 SputtererGases available : Ar, O2 & N2
DC sputtering power source : 1 x 500W
RF sputtering power source : 1 x 500W (Currently unavailable)
Chamber pressure : 5 x 10-6 torr
Substrate size : 2″, 4″ wafer or square glass, or specimens
Target available : Al, Ti, Cr, Al-Si, Ni, Mo, dielectric targets

Cooke EvaporatorGases available : N2
E-beam power source : 1x 3KW
Chamber pressure : 8 x 10-7 torr
Substrate size : 2″ or 4″ wafers
Source available (in Phase II) : Al, Ni, Mo, Ti, Cr

Cooke EvaporatorGases available : N2
E-beam power source : 1x 3KW
Chamber pressure : 8 x 10-7 torr
Substrate size : 2″ or 4″ wafers
Source available (in Phase III) : Al, Ni, Ti, Au, Cr, Pt, Fe, SiO2, Ag

AST 600EI EvaporatorGases available : O2 and N2
E-beam power source : 2 x 6KW
Chamber pressure : 9 x 10-8 torr
Substrate size : 2″ and 4″ wafers or specimens
Source available : Al, Au, Ti, Ni, Cr, Ge, Pt, Ag, ITO

AST 450I EvaporatorGases available : N2
DC sputtering power source : 1 x 3KW
Chamber pressure : 9 x 10-8 torr
Substrate size : 2” wafer or specimens
Source available : Al, Ti, Au & Ni

Edward Sputterer (Au) for SEMGases available : Ar
RF power source : 100W at 13.56 MHz
Chamber pressure : 1 x 10-3 torr
Substrate size : 2″ and 4″ wafers or square glass, or specimens
Target available : Au (For SEM only)

NSC3000 SputtererGases available : O2, N2 & Ar
DC sputtering power source : 1 x 1KW
Chamber pressure : 5 x 10-6 torr
Substrate size : 2″, 4″ wafer or square glass, or specimens
Target available : Al, Ti, Cr, Al-Si, Ni & Mo

Metrology and Tester : In-line process characterization for photolithography, etching processes, CMP, ion implantation and CVD processes enables us to monitor the machine performance and a number of key process control functions. We are equipped with many metrology systems providing non-destructive or destructive, real-time measurement of critical parameters. The effectiveness of the whole process can thus be monitored.

Tencor Sono Gauge 300For single point measurement of wafer thickness, Aluminum film thickness and sheet resistance of metal
Wafer Diameter : 3”, 4”, 5” and 6”
Substrate Thickness : 250-700 µm
Sheet Resistance : 1 to 1999 Ω/sq.
Minimum Metal Film Thickness : 100 Ȧ

Tencor P-10 Surface ProfilerMeasurement of roughness, waviness, step height on a surface
Vertical Resolution : 1 Å (Max. vertical range 13μm),
25 Å (Max vertical range 300μm)
Horizontal Resolution : 0.01 μm at 1μm/s scan speed
Max. Scan Length : 60 mm, 2-D scan only
Scan Speed : 1 μm/s to 25 mm/s
Stylus Force : 1-100 mg
Stylus Radius : 12.5 μm
Display Magnification : 60-240x

KLA-Tencor P-7 Surface ProfilerMeasurement of roughness, waviness, step height on a surface
Vertical Resolution : 1 Å (Max. vertical range 13μm),
25 Å (Max vertical range 300μm)
Horizontal Resolution : 0.025 μm
Max. Scan Length : 150 mm, 2-D scan only
Scan Speed : 2 μm/s to 25 mm/s
Stylus Force : 0.5-50 mg
Stylus Radius : 2 μm
Display Magnification : 60-240x

Dektak 150 Veeco Surface ProfilerMeasurement of roughness, waviness, step height on a surface
Stylus Force : 1 to 15mg with LIS 3 sensor
Stylus Radius : 2.5 μm and 12.5 μm
Scan Length Range : 55mm
Sample Stage : Manual Θ, 360° rotation,
manual leveling, auto X-Y 150 mm travel,
1 μm repeatability, 0.5 μm resolution
Data Points Per Scan : 60,000 maximum
Max. Sample Thickness : Up to 100 mm
Max. Wafer Size : 150 mm
Step Height Repeatability : 6A, 1 sigma on 1μm step
Vertical Range : 524 μm standard
Vertical Resolution : 1A max. (at 6.55 μm range)

Four Dimension 280C Four-Point-Probe Mapping SystemRange from 0.001 to 800k Ohm per square
Single point, 5 points or external PC mapping measurement
3″ to 6″ wafer capability
Various probe heads selection

Lucas Pro4-640R Resistivity Measurement SystemRange from 0.001 to 800k Ohm per square
150 mm probe stand
Keithley 2400 source meter
Tungsten Carbide and Osmium probe heads
Tip radius : 0.0016 inches
Spring Pressure : 85 grams

NANOmetrics Nanospec AFT Model 4150 / 3000Single film thickness measurement on silicon substrate:
Silicon Dioxide, Silicon Nitride, positive/negative photo resist and polymide
Double layers measurement on Silicon substrate :
Silicon Nitride on Silicon Dioxide, Polysilicon on Silicon Dioxide, Amorphous Silicon on Silicon Dioxide, Negative/positive resist on Silicon Oxide
Standard visible system with Lens in 10x magnification
Measuring light spot size : 15 μm (Model 4150)
25 μm (Model 3000)
Automatic focusing and preset pattern of measurement point locations (Model 4150)

J.A. Woollam M-2000VI Spectroscopic EllipsometerMeasure the optical constants: refractive Index, extinction coefficients and film Thickness for different materials
Wavelength : 370 nm to 1690 nm, ~ 580 wavelengths
All wavelengths are acquired simultaneously
Focused beam diameter in ~200 μm
Spectral resolution in 1.6 nm, 5 nm bandwidth
Test Base fixed angle of 66°, horizontal sample stage for 100 mm wafer
Automated z-height alignment

Atomic Force Microscope XE150SNon-contact AFM imaging to investigate and analyze a sample surface
Supports up to 6″ wafer
100 µm × 100 µm XY scan range
Up to 12 µm Z scan range
Radius of probe tip size, 10 nm
Enhanced acoustic enclosure
Fully motorized XY stage travels entire 150 mm × 150 mm

Film Stress Measurement System SMSi 3800Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate
Measure 1-D stress and produce 3-D topographical profile
For wafer flatness and Pattern measurement
Various of stress constant
Wafer size : 2″ to 8″
Thickness limit : less than 11 mm
Statistical process control and spreadsheet compatibility
Automatic segmentation calculation

Keyence 3D laser confocal MicroscopeKeyence VK-X260K 3D Laser Confocal Microscope provides non-contact, nanometer-level profile, roughness, and film thickness data on any material.
Light source : 408nm violet laser source
White light source
Total magnification : Up to 28000x
Optical microscope : Pinhole confocal optical system
4 Objectives (10X, 20X, 50X & 150X)
Light receiving element : 16-bit photomultiplier
Scanning method : Automatic upper/lower limit setting
High-speed light intensity optimization (AAGII)
Poor reflected light intensity supplement (Double Scan)
Stage : Manual XY Stage
70mm×70mm
Micrometric motorized Z translation
Resolution : 1nm lateral resolution
0.5nm Z-axis movement of objective lenses
Observation image : Super-high-resolution color CCD image
16-bit laser color confocal image
Confocal + ND filter optical system
C-laser differential interference image
Sample size : Up to 5″
Maximum sample height 28mm

Perfict Lab Probe Station with Keysight B1500A AnalyzerProbing Stage:
Sample size : Up to 152.4 mm (6 inch)
Probe:
Probe Tip Holder : Triaxle cable
Current leakage: <50 fA
Probe Tip diameter : 20 μm
Stereo Microscope:
Optical Magnification : 20X – 400X
Keysight B1500A Semiconductor Device Parameter Analyzer:
Current-Voltage (IV) measurement with 4 HRSMUs (High Resolution Source Monitor Units)
Current range : ± 100 mA, measuring resolution 1 fA, sourcing resolution 5 fA
Voltage range : ± 100 V, measuring resolution 0.5 μV, sourcing resolution 25 μV