CAMBRIDGE NANOTECH SAVANNAH S200 ALD ATOMIC LAYER DEPOSITION SYSTEM
CAMBRIDGE NANOTECH SAVANNAH S200 ALDATOMIC LAYER DEPOSITION SYSTEM.With high-speed pneumatic pulse valves to enable the unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates.Can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1.Wafer size: up to 200mmOzone generator and vacuum pump.Gases used: Ozone, Trimethylaluminum, Diethylzinc, and Ammonia, Anhydrous.System power requirements 115V, 50/60Hz, 20A, CE.
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Atomic Layer Deposition (ALD) offers precise control down to the atomic scale. Atomic layer deposition holds tremendous promise across a wide array of industries, including energy, optical, electronics, nanostructures, biomedical, and more.
The principle of atomic layer deposition is similar to chemical vapor deposition (CVD) except the ALD reaction breaks the CVD reaction into two half-reactions, keeping the precursor materials separate during the reaction.
This is accomplished through sequential pulsing of special precursor vapors, each of which forms about one atomic layer during each pulse (reaction cycle). Reaction cycles are then repeated until the desired film thickness is achieved, versus chemical vapor deposition that introduces multiple precursor materials simultaneously.